Everything about Strained Silicon totally explained
Strained silicon is a layer of
silicon in which the silicon
atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a
substrate of
silicon germanium . As the atoms in the silicon layer align with the atoms in the silicon germanium layer where the atoms are farther apart, the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better
mobility, resulting in better chip performance and lower energy consumption. These
electrons can move 70% faster allowing strained silicon
transistors to switch 35% faster.
More recent advances include deposition of strained silicon using
metalorganic vapor phase epitaxy (
MOVPE) with
metalorganics as starting sources, for example silicon sources (
silane and dichlorosilane) and germanium sources (
germane,
germanium tetrachloride, and
isobutylgermane).
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